依托丰富经验和兼容性技术专长,英飞凌推出革命性的CoolSiC™ MOSFET技术,可助力实现全新的产品设计。相比传统的硅开关(如IGBT和MOSFET)而言,碳化硅(SiC)功率MOSFET具有一系列优势。2000 V、1700 V、1200 V和650 V CoolSiC™ MOSFET产品适用于光伏逆变器、电池充电、储能、电机驱动器、UPS、辅助电源和开关电源等应用。
型号 | 功能描述 | 电压 | 电流 | 电阻 | 封装形式 | 规格书 |
---|---|---|---|---|---|---|
FF2MR12KM1HOSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 1000 A | 2 mΩ | AG-62MMHB | 预览下载 |
FF2MR12KM1PHOSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 1000 A | 2 mΩ | AG-62MMHB | 预览下载 |
FF6MR12KM1BOSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 500 A | 6. mΩ | AG-62MMHB | 预览下载 |
FF6MR12W2M1B11BOMA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 400 A | 6 mΩ | AG-EASY2B | 预览下载 |
FF3MR12KM1PHOSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 750 A | 3 mΩ | AG-62MMHB | 预览下载 |
FF3MR12KM1HOSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 750 A | 3 mΩ | AG-62MMHB | 预览下载 |
FF11MR12W1M1B11BOMA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 200 A | 11 mΩ | AG-EASY1B | 预览下载 |
FF8MR12W2M1PB11BPSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 300 A | 8 mΩ | AG-EASY2B | 预览下载 |
FF8MR12W2M1B11BOMA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 300 A | 8 mΩ | AG-EASY2B | 预览下载 |
FF6MR12KM1PHOSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 500 A | 6 mΩ | AG-62MMHB | 预览下载 |
FF6MR12W2M1B70BPSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 400 A | 6 mΩ | AG-EASY2B | 预览下载 |
FF6MR12W2M1PB11BPSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 400 A | 6 mΩ | AG-EASY2B | 预览下载 |
FF45MR12W1M1B11BOMA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 50 A | 45 mΩ | AG-EASY1B | 预览下载 |
FF23MR12W1M1PB11BPSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 100 A | 23 mΩ | AG-EASY1B | 预览下载 |
FF23MR12W1M1_B11 | 碳化硅 CoolSiC MOSFETs | 1200 V | 100 A | 22.5 mΩ | PressFIT压接技术 | 预览下载 |
FF11MR12W1M1B70BPSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 200 A | 11 mΩ | AG-EASY1B | 预览下载 |
F411MR12W2M1B76BOMA1 | 碳化硅 CoolSiC™ MOSFETs | 1200 V | 200 A | 11 mΩ | AG-EASY2B | 预览下载 |
碳化硅 CoolSiC™ MOSFETs | 碳化硅 CoolSiC MOSFETs | 1200 V | 50 A | 45 mΩ | PressFIT压接技术 | 预览下载 |
F4-23MR12W1M1_B76 | 碳化硅 CoolSiC MOSFETs | 1200 V | 100 A | 23 mΩ | PressFIT压接技术 | 预览下载 |
FF08MR12W1MA1B11ABPSA1 | 碳化硅 CoolSiC MOSFETs | 1200 V | 150 A | 8 mΩ | AG-EASY1BS-1 | 预览下载 |